All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes

Current fluctuations in double-barrier quantum well resonant tunneling diodes

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...

Resonant tunneling through quantum-dot arrays.

Resonant tunneling in graphene pseudomagnetic quantum dots.

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...

THz resonant-tunneling diodes

Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes

Charge and potential profiles are self-consistently calculated in double-barrier heterostmctures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capa...